Datasheet > ASDM100R750PKQ

ASDM100R750PKQ

更新时间： 2024-09-16 17:15:47

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1192K
描述
TO-252

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中文翻译

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数据手册

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ASDM100R750PKQ 数据手册

ASDM100R750PKQ

-100V P-Channel MOSFET

General Features

Product Summary

● Split gate trench MOSFET technology

● Low RDS(on) & FOM

V DS

-100

mΩ

● Extremely low switching loss

R DS(on),Typ@ VGS=10 V

I D

● Excellent stability and uniformity

-20

Application

●Power management

●Portable equipment

P-channel

TO-252

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

-100

±20

-20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

Tc=25℃

Drain Current

I_D

Tc=100℃

-14

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-80

EAS

100

Tc=25℃

Total Power Dissipation

P_D

Tc=100℃

28.8

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

1.35

1.7

www.ascendsemi.com

0755-86970486

NOV 2021 Version1.0

1/7

12 3 4 5 6 7

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