Datasheet > ASDM100R027NHAG

ASDM100R027NHAG

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
12页	2040K
描述
TO-263

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数据手册

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ASDM100R027NHAG 数据手册

ASDM100R027NHAG

100V N-Channel MOSFET

Features

Product Summary

 Fast Switching

BVDSS

100

2.7

 Low On-Resistance

mΩ

R DS(on),Max@ VGS=10 V

 Low Gate Charge

 Low Reverse transfer capacitances

 High avalanche ruggedness

 RoHS product

180

Application



BMS

 High current switching applications

TO-263

unless otherwise specified

at T =25°C

ABSOLUTE RATINGS

Symbol

V_DSS

Parameter

Rating

Units

Drain-Source Voltage

100

Continuous Drain Current, Silicon Limited

Continuous Drain Current, Package Limited

Continuous Drain Current @T_C=100°C , Silicon Limited

Pulsed Drain Current

200

180

I_D

126.6

Note1

720

I_DM

Gate-Source Voltage

±20

V_GS

Note2

Avalanche Energy

784

E_AS

Power Dissipation

250

P_D

Derating Factor above 25°C

150，–55 to 150

260

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

Note1：Repetitive Rating：Pulse width limited by maximum junction temperature

Note2：L=0.5mH, Ias=56A, Start T_J=25℃

Thermal characteristics

Symbol

Parameter

Max

0.5

Units

℃/W

thermal resistance, Junction-Case

R_θJC

thermal resistance, Junction-Ambient

62.5

℃/W

R_θJA

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