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ASDM100R160NKQ PDF预览

ASDM100R160NKQ

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
7页 1611K
描述
TO-252

ASDM100R160NKQ 数据手册

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ASDM100R160NKQ  
100V N-Channel Power MOSFET  
General Description  
Low RDS(on) & FOM  
Product Summary  
Extremely low switching loss  
Excellent stability and uniformity  
Fast switching and soft recovery  
V DS  
100  
14  
V
R DS(on),Typ@ VGS=10 V  
I D  
m  
A
Applications  
45  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
100  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
V
V
±20  
45  
TC=25℃  
Drain Current  
ID  
A
TC=100℃  
28.5  
180  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
A
EAS  
81  
mJ  
Tc=25℃  
72  
Total Power Dissipation C  
PD  
W
Tc=100℃  
28.8  
-55+150  
Junction and Storage Temperature Range  
TJ ,TSTG  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
15  
Max  
20  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
t10S  
Steady-State  
Steady-State  
40  
50  
/W  
RθJC  
1.35  
1.7  
www.ascendsemi.com  
0755-86970486  
May 2019 Version1.0  
1/7  

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