Datasheet > ASDM100R066NQ

ASDM100R066NQ

更新时间： 2024-09-16 17:15:35

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1342K
描述
PDFN5*6-8

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ASDM100R066NQ 数据手册

ASDM100R066NQ

100V N-CHANNEL MOSFET

Features

Product Summary

 Advanced Trench MOS Technology

 Low Gate Charge

100

5.0

mΩ

V_DS

R_DS(on),Typ

I_D

@ VGS=10V

 Low R_DS(ON)

 100% EAS Guaranteed

 Green Device Available

Applications

 Power Management in Desktop Computer or

DC/DC Converters.

 Isolated DC/DC Converters in Telecom and

Industrial.

DFN5x6-8

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current^1,6

Pulsed Drain Current²

100

±20

I_D@T_C=25℃

I_D@T_C=70℃

328

I_DM

EAS

Single Pulse Avalanche Energy³

I_AS

P_D@T_C=25℃

T_STG

Avalanche Current

Total Power Dissipation⁴

108

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

Max.

Unit

℃/W

Thermal Resistance Junction-Ambient ¹(t≦10s)

---

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

---

R_θJC

1.15

www.ascendsemi.com

0755-86970486

NOV 2018 Version1.1

1/7

12 3 4 5 6 7

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