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ASDM100R090NP PDF预览

ASDM100R090NP

更新时间: 2024-12-01 17:15:35
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
7页 1668K
描述
TO-220

ASDM100R090NP 数据手册

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ASDM100R090NP  
100V N-CHANNEL MOSFET  
Features  
High Speed Power Switching, Logic Level  
Enhanced Body diode dv/dt capability  
Enhanced Avalanche Ruggedness  
100% UIS Tested, 100% Rg Tested  
Lead Free, Halogen Free  
Product Summary  
VDS  
V
m  
A
100  
8.0  
75  
RDS(on),Typ @VGS=10V  
ID  
Application  
Synchronous Rectification in SMPS  
Hard Switching and High Speed Circuit  
DC/DC in Telecoms and Inductrial  
D
G
D
S
G
S
Absolute Maximum Ratings at Tj=25(unless otherwise specified)  
Parameter  
Symbol  
Conditions  
TC=25℃  
TC=100℃  
Value  
75  
Unit  
Continuous Drain Current (Silicon Limited)  
ID  
A
38  
Drain to Source Voltage  
Gate to Source Voltage  
Pulsed Drain Current  
-
-
-
100  
V
V
A
VDS  
VGS  
IDM  
+20/-12  
300  
Avalanche Energy, Single Pulse  
Power Dissipation  
Operating and Storage Temperature  
80  
3.1  
-55 to150  
mJ  
W
EAS  
PD  
TJ, Tstg  
L=0.1mH, TC=25℃  
TC=25℃  
-
Absolute Maximum Ratings  
Parameter  
Thermal Resistance Junction-Lead  
Thermal Resistance Junction-Ambient (t≤10s)  
Symbol  
RθJL  
Max  
23  
40  
Unit  
/W  
/W  
/W  
RθJA  
Thermal Resistance Junction-Ambient (steady state)  
75  
www.ascendsemi.com  
0755-86970486  
NOV 2018 Version1.0  
1/7  

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