Datasheet > ASDM100R090NKG

ASDM100R090NKG

更新时间： 2024-09-16 17:15:23

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	678K
描述
TO-262

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中文翻译

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数据手册

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ASDM100R090NKG 数据手册

ASDM100R090NKG

100V N-CHANNEL MOSFET

Features

Product Summary

◇ High Speed Power Switching, Logic Level

◇ Enhanced Body diode dv/dt capability

◇ Enhanced Avalanche Ruggedness

◇ 100% UIS Tested, 100% Rg Tested

◇ Lead Free, Halogen Free

VDS

mΩ

100

8.4

RDS(on),Typ@VGS=10V

100

Application

◇ Synchronous Rectification in SMPS

◇ Hard Switching and High Speed Circuit

◇ DC/DC in Telecoms and Inductrial

TO-262

Absolute Maximum Ratings at T_j=25℃ (unless otherwise specified)

Parameter

Symbol

Conditions

Value

Unit

100

T_C=25℃

Continuous Drain Current (Silicon Limited)

I_D

T_C=100℃

Drain to Source Voltage

Gate to Source Voltage

100

V_DS

V_GS

±20

Pulsed Drain Current

400

I_DM

Avalanche Energy, Single Pulse

Power Dissipation

Operating and Storage Temperature

3.1

-55 to150

℃

E_AS

P_D

T_J, T_stg

L=0.1mH, T_C=25℃

T_C=25℃

Absolute Maximum Ratings

Parameter

Thermal Resistance Junction-Case

Symbol

R_θJC

Max

0.5

Unit

℃/W

RθJA

Thermal Resistance Junction-Ambient (steady state)

℃/W

NOV 2018 Version1.0

1/7

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7

中文翻译

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