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ASDM100R090NKG PDF预览

ASDM100R090NKG

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
7页 678K
描述
TO-262

ASDM100R090NKG 数据手册

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ASDM100R090NKG  
100V N-CHANNEL MOSFET  
Features  
Product Summary  
High Speed Power Switching, Logic Level  
Enhanced Body diode dv/dt capability  
Enhanced Avalanche Ruggedness  
100% UIS Tested, 100% Rg Tested  
Lead Free, Halogen Free  
VDS  
V
m  
A
100  
8.4  
RDS(on),Typ@VGS=10V  
ID  
100  
Application  
Synchronous Rectification in SMPS  
Hard Switching and High Speed Circuit  
DC/DC in Telecoms and Inductrial  
D
G
S
TO-262  
Absolute Maximum Ratings at Tj=25(unless otherwise specified)  
Parameter  
Symbol  
Conditions  
Value  
Unit  
100  
TC=25℃  
Continuous Drain Current (Silicon Limited)  
ID  
A
38  
TC=100℃  
Drain to Source Voltage  
Gate to Source Voltage  
-
-
100  
V
V
VDS  
VGS  
±20  
Pulsed Drain Current  
-
400  
A
IDM  
Avalanche Energy, Single Pulse  
Power Dissipation  
Operating and Storage Temperature  
80  
3.1  
-55 to150  
mJ  
W
EAS  
PD  
TJ, Tstg  
L=0.1mH, TC=25℃  
TC=25℃  
-
Absolute Maximum Ratings  
Parameter  
Thermal Resistance Junction-Case  
Symbol  
RθJC  
Max  
0.5  
Unit  
/W  
RθJA  
Thermal Resistance Junction-Ambient (steady state)  
62  
/W  
NOV 2018 Version1.0  
1/7  
Ascend Semicondutor Co.,Ltd  

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