Datasheet > ASDM100R045NQ

ASDM100R045NQ

更新时间： 2024-09-16 17:15:35

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
8页	1434K
描述
PDFN5*6-8

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ASDM100R045NQ 数据手册

ASDM100R045NQ

100V N-Channel MOSFET

General Features

Product Summary

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

V DS

100

3.8

R DS(on),Typ@ VGS=10 V

I D

mΩ

● Excellent package for good heat dissipation

● Optimized for synchronous rectification Low Input

Capacitance

Application

●Automotive applications

●Hard switched and high frequency circuits

●BLDC Motor drive applications

●Battery powered circuits

DFN5*6-8

Absolute Maximum Ratings (T_J=25°C unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

100

±20

Gate-Source Voltage

V_GS

T_C=25°C

Drain Current-Continuous

I_D

T_C=100°C

Note 1

Drain Current-Pulsed

T_C=25°C

I_DM

I_AR

360

Avalanche Current

Single Pulse Avalanche Energy ^{Note 3}

Maximum Power Dissipation

Operating Junction Temperature Range

E_AS

P_tot

T_J

°C

T_C=25°C

150

Thermal Resistance Ratings

Parameter

Junction-to-Ambient ^{Note 2}

Symbol

R_θJA

Conditions

Min.

Typ.

Max.

Unit

Steady State

54.5

1.7

°C/W

Thermal resistance, Junction-to-Case

R_θJC

Notes:

1. Pulse Test: Pulse Width ≤ 10ms, Duty Cycle ≤ 1%.

2. _θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design. R_θJAshown below for single device operation on FR-4 in still

air.

3. Starting T_J=25°C, L=0.1mH, R_g=50Ω, V_GS=10V.

www.ascendsemi.com

0755-86970486

NOV 2018 Version2.0

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