Datasheet > ASDM100R045NP

ASDM100R045NP

更新时间： 2024-11-21 17:15:43

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	1683K
描述
TO-220

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ASDM100R045NP 数据手册

ASDM100R045NP

100V N-Channel MOSFET

General Features

Product Summary

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

V DS

mΩ

100

4.5

R DS(on),Typ@ VGS=10 V

I D

● Excellent package for good heat dissipation

135

● Special process technology for high ESD capability

Application

●Automotive applications

●Hard switched and high frequency circuits

●Uninterruptible power supply

TO-220

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Condition

Value

Unit

Drain-Source Voltage

100

135

T_C=25℃

T_C=70℃

Continuous Drain Current¹

I_D

V_GS

I_DM

Gate-Source Voltage

±20

Pulsed Drain Current²

T_C=25℃

700

P_D

Total Power Dissipation

100

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature

-55 to 175

Thermal Data

Typ.

Max

Symbol

Parameter

Unit

R_θJA

R_θJc

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Case

℃/W

0.5

www.ascendsemi.com

0755-86970486

NOV 2018 Version2.0

1/8

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