Datasheet > AOD516

AOD516

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	508K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:46A;Vgs(th)(V):±20;漏源导通电阻:5mΩ@10V;漏源导通电阻:10mΩ@4.5V

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AOD516 数据手册

UMW

AOD516

30V N-Channel MOSFET

General Description

• Latest Trench Power MOSFET technology

• Very Low R_DS(on)at 4.5V V_GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Product Summary

•

DS =

30V

I (at V =10V) = 46A

(at V =10V) = < 5mΩ

•

DS(ON)

(at V = 4.5V) = < 10mΩ

Application

• DC/DC Converters in Computing

• Isolated DC/DC Converters in Telecom and Industrial

=25°C unless otherwise noted

Absolute Maximum Ratings T_A

Parameter

Maximum

Units

Symbol

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

170

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

2.5

P_DSM

°C

1.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

t ≤ 10s

R_θJA

Steady-State

R_θJC

2.5

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UTD Semiconductor Co.,Limited

12 3 4 5 6

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