Datasheet > AOD607_08

AOD607_08

更新时间： 2024-09-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	215K
描述
Complementary Enhancement Mode Field Effect Transistor

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AOD607_08 数据手册

AOD607

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AOD607 uses advanced trench

technology MOSFETs to provide

excellent R_DS(ON)and low gate charge.

The complementary MOSFETs may be

used in H-bridge, Inverters and other

applications.

n-channel

p-channel

-30V

-12A (V_GS= -10V)

V_DS(V) = 30V

I_D= 12A (V_GS=10V)

R_DS(ON)

< 25 mΩ (V_GS=10V)

< 34 mΩ (V_GS=4.5V)

< 37 mΩ (V_GS= -10V)

< 62 mΩ (V_GS= -4.5V)

100% UIS Tested!

-RoHS Compliant

-Halogen Free*

TO-252-4L

D-PAK

D1/D2

Top View

Drain Connected

to Tab

Bottom View

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±20

-30

±20

V_GS

T_C=25°C

-12

T_C=100°C

I_D

9.4

-9.4

-40

I_DM

I_AR

E_AR

-18

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

12.5

2.1

12.5

2.1

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol Device Typ

Max

Maximum Junction-to-Ambient ^A

n-ch

4.5

°C/W

t ≤ 10s

R_θJA

R_θJC

R_θJA

R_θJC

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Case ^B

Steady-State

Maximum Junction-to-Ambient ^A

p-ch

4.5

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Case ^B

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7...9

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