Datasheet > AOD609

AOD609

更新时间： 2024-09-13 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	728K
描述
Complementary Enhancement

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AOD609 数据手册

AOD609

Complementary Enhancement

Mode Field Effect Transistor

General Description

The AOD609 uses advanced trench technology MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features

n-channel

_DS(V) = 40V, I_D= 12A (V_GS=10V)

R_DS(ON)< 30mΩ (V_GS=10V)

_DS(ON)< 40mΩ (V_GS=4.5V)

p-channel

V_DS(V) = -40V, I_D= -12A (V_GS=-10V)

R_DS(ON)< 45mΩ (VGS= -10V)

_DS(ON)< 66mΩ (VGS= -4.5V)

Top View

D1/D2

Drain Connected to

Tab

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Max n-channel

Symbol

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^B

Avalanche Current ^C

±20

-40

V_GS

±20

-12

T_C=25°C

T_C=100°C

I_D

-12

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH^C

9.8

T_C=25°C

Power Dissipation

P_D

T_C=100°C

T_A=25°C

Power Dissipation

T_A=70°C

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,D

n-ch

5.5

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,D

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJC

R_θJA

R_θJC

Maximum Junction-to-Ambient ^A,D

p-ch

16.7

3.5

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

1/9

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