Datasheet > AOD5B65M1

AOD5B65M1

更新时间： 2024-11-28 14:47:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	559K
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AOD5B65M1 数据手册

AOD5B65M1

650V, 5A Alpha IGBT ^TM

With soft and fast recovery anti-parallel diode

General Description

Product Summary

V_CE

• Latest AlphaIGBT (α IGBT) technology

• 650V breakdown voltage

650V

I_C(T_C=100°C)

V_CE(sat)(T_J=25°C)

• Very fast and soft recovery freewheeling diode

• High efficient turn-on di/dt controllability

• Low VCE(SAT) enables high efficiencies

• Low turn-off switching loss and softness

• Very good EMI behavior

1.57V

• High short-circuit ruggedness

Applications

• Motor Drives

• Home appliance applications such as refrigerators

and washing machines

• Fan, Pumps, Vacuum Cleaner

• Other Hard Switching Applications

TO-252

DPAK

Top View

Bottom View

AOD5B65M1

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOD5B65M1

TO252

2500

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V _CE

AOD5B65M1

Units

Collector-Emitter Voltage

Gate-Emitter Voltage

650

±30

V _GE

T_C=25°C

Continuous Collector

Current

I _C

T_C=100°C

Pulsed Collector Current, Limited by T_Jmax

I _CM

I _LM

Turn off SOA, V_CE≤ 650V, Limited by T_Jmax

T_C=25°C

Continuous Diode

I _F

T_C=100°C

Forward Current

Diode Pulsed Current, Limited by T_Jmax

Short circuit withstanding time ₁₎

I _FM

t _SC

µs

V_GE= 15V, V_CC≤ 400V, T_J≤ 150°C

T_C=25°C

Power Dissipation

P _D

T_C=100°C

Junction and Storage Temperature Range

T _J, T _STG

T _L

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

300

Thermal Characteristics

Parameter

Symbol

AOD5B65M1

Units

°C/W

R _θ

Maximum Junction-to-Ambient

Maximum IGBT Junction-to-Case

Maximum Diode Junction-to-Case

1.8

5.5

R _θ

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev.1.0: April 2015

www.aosmd.com

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