AOD608

更新时间： 2024-11-24 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	213K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AOD608 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

AOD608 数据手册

AOD608

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

The AOD608 uses advanced trench

technology MOSFETs to provide

excellent R_DS(ON)and low gate charge.

The complementary MOSFETs may be

used in H-bridge, Inverters and other

applications. Standard product AOD608 is

Pb-free (meets ROHS & Sony 259

specifications).

p-channel

-40V

-10A (V_GS= -10V)

R_DS(ON)

V_DS(V) = 40V

I_D= 10A (V_GS=10V)

R_DS(ON)

< 39 mΩ (V_GS=10V)

< 50 mΩ (V_GS=4.5V)

< 51 mΩ (V_GS= -10V)

< 75 mΩ (V_GS= -4.5V)

ESD rating: 3000V (HBM)

TO-252-4L

D-PAK

D1/D2

Top View

Drain Connected

to Tab

n-channel

p-channel

S1 G1

S2 G2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

±20

-10

T_C=25°C

T_C=100°C

I_D

-10

I_DM

I_AR

E_AR

-30

-15

Repetitive avalanche energy L=0.3mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol Device Typ

Max

t ≤ 10s

Maximum Junction-to-Ambient

Maximum Junction-to-Case ^B

Maximum Junction-to-Ambient

Maximum Junction-to-Case ^B

n-ch

°C/W

R_θJA

R_θJC

R_θJA

R_θJC

Steady-State

t ≤ 10s

7.5

p-ch

°C/W

Steady-State

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7...9

中文翻译

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