Datasheet > AOD609

AOD609

更新时间： 2024-11-24 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	250K
描述
Complementary Enhancement Mode Field Effect Transistor

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AOD609 数据手册

AOD609

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V, I_D= 12A (V_GS=10V)

The AOD609/L uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be

used in H-bridge, Inverters and other applications.

AOD609 and AOD609L are electrically identical.

R_DS(ON)< 30mΩ (V_GS=10V)

R_DS(ON)< 40mΩ (V_GS=4.5V)

p-channel

V_DS(V) = -40V, I_D= -12A (V_GS=-10V)

-RoHS Compliant

-AOD609L is Halogen Free

R_DS(ON)< 45mΩ (VGS= -10V)

R_DS(ON)< 66mΩ (VGS= -4.5V)

TO-252-4L

D-PAK

D1/D2

Top View

Drain Connected

to Tab

p-channel

n-channel

S2 G2 S1 G1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-40

±20

-12

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,H

±20

T_C=25°C

T_C=100°C

I_D

-12

Pulsed Drain Current

I_DM

I_AR

E_AR

-30

Avalanche Current

-20

Repetitive avalanche energy L=0.1mH

9.8

T_C=25°C

Power Dissipation

P_D

T_C=100°C

T_A=25°C

Power Dissipation

T_A=70°C

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient

Symbol

Device

n-ch

Typ

Max

Units

°C/W

A,D

t ≤ 10s

17.4

R_θJA

R_θJC

R_θJA

R_θJC

A,D

Steady-State

t ≤ 10s

Steady-State

n-ch

5.5

Maximum Junction-to-Lead

A,D

Maximum Junction-to-Ambient

p-ch

16.7

3.5

°C/W

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

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