Datasheet > AOD5B60D

AOD5B60D

更新时间： 2024-11-28 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		二极管双极性晶体管
页数	文件大小	规格书
9页	686K
描述
600V, 5A Alpha IGBT with Diode

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中文翻译

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技术参数
数据手册

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AOD5B60D 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	1.71	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	600 V	门极-发射极最大电压：	20 V
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	54.4 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	Base Number Matches：	1

AOD5B60D 数据手册

AOD5B60D

600V, 5A Alpha IGBT ^TMwith Diode

General Description

Product Summary

The Alpha IGBT^TMline of products offers best-in-class

performance in conduction and switching losses, with

robust short circuit capability. They are designed for ease

of paralleling, minimal gate spike under high dV/dt

conditions and resistance to oscillations. The soft co-

package diode is targeted for minimal losses in motor

control applications.

V_CE

600V

I_C(T_C=100°C)

V_CE(sat)(T_C=25°C)

1.55V

TO252

DPAK

Top View

Bottom View

AOD5B60D

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V _CE

AOD5B60D

Units

Collector-Emitter Voltage

Gate-Emitter Voltage

600

±20

V _GE

T_C=25°C

Continuous Collector

Current

I _C

T_C=100°C

Pulsed Collector Current, Limited by T_Jmax

I _CM

I _LM

Turn off SOA, V_CE≤ 600V, Limited by T_Jmax

T_C=25°C

Continuous Diode

I _F

T_C=100°C

Forward Current

Diode Pulsed Current, Limited by T_Jmax

I _FM

Short circuit withstanding time V_GE= 15V, V_CE

400V, delay between short circuits ≥ 1.0s,

T_C=150°C

≤

t _SC

µs

T_C=25°C

54.4

21.7

P _D

°C

T_C=100°C

Power Dissipation

Junction and Storage Temperature Range

T _J, T _STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T _L

300

°C

Thermal Characteristics

Parameter

Symbol

AOD5B60D

Units

°C/W

R _θ

Maximum Junction-to-Ambient

Maximum IGBT Junction-to-Case

Maximum Diode Junction-to-Case

2.3

R _θ

Rev1: Nov 2012

www.aosmd.com

Page 1 of 9

12 3 4 5 6 7...9

中文翻译

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