Datasheet > AOD518

AOD518

更新时间： 2024-09-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	315K
描述
30V N-Channel AlphaMOS

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AOD518 数据手册

AOD518/AOI518

30V N-Channel AlphaMOS

General Description

Product Summary

V_DS

30V

• Latest Trench Power MOSFET technology

• Very Low RDS(on) at 10VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

54A

< 8mΩ

< 12mΩ

Application

• DC/DC Converters in Computing

100% UIS Tested

100% R_gTested

• Isolated DC/DC Converters in Telecom and Industrial

TO252

DPAK

TO-251A

IPAK

Top View

Bottom View

TopView

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS

Avalanche energy L=0.1mH ^C

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

2.5

1.6

-55 to 175

P_DSM

°C

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.5

Rev 1: Mar 2012

www.aosmd.com

Page 1 of 6

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