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AOD606

更新时间: 2024-09-13 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 209K
描述
Complementary Enhancement Mode Field Effect Transistor

AOD606 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.8
Base Number Matches:1

AOD606 数据手册

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AOD606  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 40V  
ID = 8A (VGS=10V)  
RDS(ON)  
The AOD606 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
in H-bridge, Inverters and other  
applications. Standard product AOD606 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AOD606L is a Green Product ordering option.  
AOD606 and AOD606L are electrically  
identical.  
p-channel  
-40V  
-8A (VGS = -10V)  
RDS(ON)  
< 33 m(VGS=10V)  
< 47 m(VGS=4.5V)  
< 50 m(VGS = -10V)  
< 70 m(VGS = -4.5V)  
TO-252-4L  
D-PAK  
D1/D2  
D1/D2  
Top View  
Drain Connected to  
Tab  
G1  
G2  
S2  
S1  
n-channel  
p-channel  
S1 G1  
S2 G2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
40  
-40  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
±20  
V
A
TC=25°C  
8
8
TC=100°C  
ID  
8
8
-30  
C
Pulsed Drain Current  
IDM  
IAR  
EAR  
30  
C
Avalanche Current  
8
-8  
A
C
Repetitive avalanche energy L=0.1mH  
20  
30  
mJ  
TC=25°C  
20  
50  
PD  
W
B
Power Dissipation  
Power Dissipation  
TC=100°C  
TA=25°C  
TA=70°C  
10  
2
25  
2.5  
PDSM  
W
A
1.3  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
-55 to 175  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Symbol  
Device Typ  
Max  
30  
60  
A
t 10s  
n-ch  
n-ch  
n-ch  
17.4  
50  
4
°C/W  
°C/W  
°C/W  
RθJA  
RθJC  
RθJA  
RθJC  
A
Steady-State  
Steady-State  
t 10s  
Steady-State  
Steady-State  
B
7.5  
Maximum Junction-to-Case  
A
A
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
p-ch  
p-ch  
p-ch  
16.7  
40  
2.5  
25  
50  
3
°C/W  
°C/W  
°C/W  
B
Maximum Junction-to-Case  
Alpha & Omega Semiconductor, Ltd.  

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