Datasheet > AOD604

AOD604

更新时间： 2024-11-24 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	168K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AOD604 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

AOD604 数据手册

AOD604

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V

I_D= 8A (V_GS=10V)

R_DS(ON)

The AOD604 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

in H-bridge, Inverters and other

applications. Standard product AOD604 is Pb-

free (meets ROHS & Sony 259 specifications).

AOD604L is a Green Product ordering option.

AOD604 and AOD604L are electrically

identical.

p-channel

-40V

-8A (V_GS= -10V)

R_DS(ON)

< 33 mΩ (V_GS=10V)

< 47 mΩ (V_GS=4.5V)

< 50 mΩ (V_GS= -10V)

< 70 mΩ (V_GS= -4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

n-channel

p-channel

S1 G1 D1/D2 G2 S2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

I_D

-30

Pulsed Drain Current

I_DM

I_AR

E_AR

Avalanche Current

-8

Repetitive avalanche energy L=0.1mH

T_C=25°C

P_D

Power Dissipation

T_C=100°C

T_A=25°C

T_A=70°C

2.5

P_DSM

1.3

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient

Symbol

Device Typ

Max

t ≤ 10s

n-ch

17.4

°C/W

R_θJA

R_θJC

R_θJA

R_θJC

Steady-State

t ≤ 10s

Steady-State

7.5

Maximum Junction-to-Case

Maximum Junction-to-Ambient

p-ch

16.7

2.5

°C/W

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7...9

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