Datasheet > AOD603A

AOD603A

更新时间： 2024-11-24 12:24:23

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飞思卡尔 - FREESCALE		/
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11页	984K
描述
60V Complementary MOSFET

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AOD603A 数据手册

AOD603A

60V Complementary MOSFET

General Description

The AOD603A uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features

N-Channel

_DS= 60V

P-Channel

-60V

I_D= 13A (V_GS=10V)

R_DS(ON)

-13A (V_GS=-10V)

R_DS(ON)

< 60mꢀ (V_GS=10V)

< 85mꢀ (V_GS=4.5V)

< 115mꢀ (V_GS=-10V)

< 150mꢀ (V_GS=-4.5V)

N-channel

P-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max N-channel

Max P-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

-60

±20

-12

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

9.5

-9.5

-30

I_DM

T_A=25°C

T_A=70°C

3.5

-3

Continuous Drain

Current

I_DSM

-2.5

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

42.5

21.5

P_D

13.5

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter N-channel

Symbol

Typ

Max

Units

°C/W

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Parameter P-channel

≤ 10s

R_θJA

Steady-State

R_θJC

5.5

Max

Symbol

Typ

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

R_θJC

Steady-State

2.5

3.5

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