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AOD7S60 PDF预览

AOD7S60

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
7页 539K
描述
600V 7A a MOS TM Power Transistor

AOD7S60 数据手册

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AOD7S60/AOU7S60  
600V 7A  
α
MOS TM Power Transistor  
General Description  
the advanced αMOSTM high voltage process that is  
The AOD7S60 & AOU7S60 have been fabricated using  
designed to deliver high levels of performance and  
robustness in switching applications.  
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
Features  
VDS @ Tj,max  
700V  
33A  
IDM  
RDS(ON),max  
Qg,typ  
0.6Ω  
8.2nC  
1.9µJ  
Eoss @ 400V  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
±30  
7
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
5
A
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
33  
1.7  
43  
86  
83  
A
mJ  
Repetitive avalanche energy C  
Single pulsed avalanche energy H  
TC=25°C  
EAR  
EAS  
mJ  
W
W/ oC  
PD  
Power Dissipation B  
Derate above 25oC  
0.7  
100  
20  
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt  
dv/dt  
V/ns  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds K  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
Typical  
Maximum  
Units  
Maximum Junction-to-Ambient A,D  
Maximum Case-to-sink A  
Maximum Junction-to-CaseD,F  
RθJA  
45  
55  
°C/W  
RθCS  
RθJC  
--  
0.5  
1.5  
°C/W  
°C/W  
1.2  
1/7  
www.freescale.net.cn  

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