Datasheet > AOE6930

AOE6930

更新时间： 2024-09-15 18:35:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	537K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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AOE6930 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	1.54
Base Number Matches：	1

AOE6930 数据手册

AOE6930

30V Dual Asymmetric N-Channel AlphaMOS

General Description

Product Summary

• Bottom Source Technology

• Very Low R_DS(ON)

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

V_DS

30V

22A

30V

85A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 4.3mΩ < 0.83mΩ

< 7.0mΩ < 1.05mΩ

R_DS(ON)(at V_GS=4.5V)

Applications

100% UIS Tested

100% Rg Tested

• DC/DC Converters in Computing, Servers, and POL

• Non-Isolated DC/DC Converters in Telecom and Industrial

DFN 5X6E

Top View

Bottom View

Top View

D2/S1

S1/D2

PIN1

S1/D2

D2/S1

S1/D2

D2/S1 D2/S1 5

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOE6930

DFN 5x6E

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max Q1

Max Q2

Units

Drain-Source Voltage

Gate-Source Voltage

±12

340

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

22 ^G

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy

V_DSSpike

I_DSM

I_AS

L=0.01mH

10µs

E_AS

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

9.6

4.1

2.6

P_DSM

3.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol Typ Q1 Typ Q2 Max Q1 Max Q2

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJC

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case (Note) Steady-State

Note: Bottom S2, D1.

Steady-State

1.25

5.2

1.65

Rev.2.0 : June 2015

www.aosmd.com

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