Datasheet > AOD9N52

AOD9N52

更新时间： 2024-09-15 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	550K
描述
520V,9A N-Channel MOSFET

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AOD9N52 数据手册

AOD9N52

520V,9A N-Channel MOSFET

General Description

Product Summary

The AOD9N52 have been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

V_DS

620V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.86Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

Top View

Bottom View

AOD9N52

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

520

±30

V_GS

T_C=25°C

Continuous Drain

Current^B

I_D

T_C=100°C

5.7

Pulsed Drain Current ^C

I_DM

3.8

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

216

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

433

V/ns

W/ ^oC

178

P_D

Power Dissipation ^B

Derate above 25^oC

1.4

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

0.7

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

0.5

Rev 0: May 2012

www.aosmd.com

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