Datasheet > AOD9N40

AOD9N40

更新时间： 2024-11-24 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	513K
描述
400V,8A N-Channel MOSFET

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AOD9N40 数据手册

AOD9N40

400V,8A N-Channel MOSFET

General Description

The AOD9N40 is fabricated using an advanced high

levels of performance and robustness in popular AC-DC

with guaranteed avalanche capability this device can be

voltage MOSFET process that is designed to deliver high

applications.By providing low R_DS(on), C_issand C_rssalong

adopted quickly into new and existing offline power supply

synchronous rectifiers for consumer, telecom, industrial

designs.This device is ideal for boost converters and

power supplies and LED backlighting.

Features

V_DS

500V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

<0.8Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

400

±30

V_GS

Continuous Drain

Current^B

Pulsed Drain Current ^C

Avalanche Current ^C

T_C=25°C

I_D

T_C=100°C

I_DM

3.2

150

300

I_AR

Repetitive avalanche energy

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

E_AR

E_AS

dv/dt

V/ns

125

P_D

Power Dissipation ^B

Derate above 25^oC

W/ C

-50 to 150

T_J, T_STG

T_L

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

°C

300

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,G

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

Symbol

R_θJA

Typical

Maximum

Units

°C/W

0.5

R_θCS

R_θJC

0.7

1/6

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