Datasheet > AOE6932_36_PR

AOE6932_36_PR

更新时间： 2024-09-16 01:11:23

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美国万代 - AOS		/
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2页	76K
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AOE6932 improves gate driving performance

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AOE6932_36_PR 数据手册

Alpha and Omega Semiconductor

475 Oakmead Parkway, Sunnyvale, California 94085 USA

FOR IMMEDIATE RELEASE

Media Contact: Mina Galvan

Tel: 408.789.3233

Email: mina.galvan@aosmd.com

Alpha and Omega Semiconductor Expands Its New PairFET™ Family

New PairFET^TMseries sets new industry standard with improved thermals and higher efficiency

SUNNYVALE, Calif., Sep. 14, 2016 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer,

developer and global supplier of a broad range of power semiconductors and power ICs, today introduced two new products

based on its high efficiency XS-PairFET package and latest low voltage technology. The AOE6932 and AOE6936 are the

newest extensions to the flagship device, AOE6930, that was released in 2015. Both products are newly optimized for

enhanced driving and switching performance.

AOE6932 improves gate driving performance and reduces power loss at relatively low output current. AOE6936 features a

20V gate voltage tolerance with much smaller parasitic capacitances. Both devices offer the same 8mohm (max) Rdson

(@4.5V gate driving voltage) on the high side, but present different Rdson values for the low side FET. AOE6932 is

designed with a 1.8mohm (max) @ 4.5Vgs low side FET, while AOE6936 is designed with a 3mohm (max) low side FET.

Application tests show that these distinct configurations uniquely optimize each device to achieve the best efficiency and

address specific application requirements, such as the input-output voltage headroom, and current per phase for the Vcore

power supply.

“Our first product packaged in a PairFET with a bottom-sourced low-side FET was released last year, and the AOE6930 is

now widely accepted by leading customers in notebook PC, desktop PC, and high-end VGA designs. The benefits offered by

this structure are significant. With direct thermal dissipation from the low side source down to the copper layer of the PCB,

the temperature rise can be well controlled in the power device. With the newly released AOE6932 and AOE6936, we offer

wide coverage of various application conditions, with optimal cost effectiveness. This product family is setting a new

industry standard for high power density circuit design in all POL applications,” said Lei Feng, Sr. Marketing Director of

MOSFET product line at AOS.

Device Specification Table

R_DS(ON)(mΩ

Part

Number

V_GS

(±V)

VGS(th)

(max V)

Ciss

(pF)

Coss

(pF)

Crss

(pF)

Qg*

(nC)

Qgd

(nC)

max)* at V_GS

Package

_DS(V)

10V

4.5V

High Side

Low Side

High Side

Low Side

High Side

Low Side

2.2

1.9

2.2

2.1

1.9

1150

4180

1150

2270

1075

5560

380

880

380

650

480

1670

125

7.5

AOE6932

AOE6936

1.4

1.8

4.5

2.5

4.3

AOE6930

(reference)

0.83

1.05

200

Tel: 408.830.9742 • Fax: 408.830.9757 •www.aosmd.com

中文翻译

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