AOD607

更新时间： 2024-11-24 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	135K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
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AOD607 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	7.83

AOD607 数据手册

AOD607

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AOD607 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

in H-bridge, Inverters and other

applications. Standard product AOD607 is Pb-

free (meets ROHS & Sony 259 specifications).

AOD607L is a Green Product ordering option.

AOD607 and AOD607L are electrically

identical.

n-channel

p-channel

-30V

-12A (V_GS= -10V)

V_DS(V) = 30V

I_D= 12A (V_GS=10V)

R_DS(ON)

< 25 mΩ (V_GS=10V)

< 34 mΩ (V_GS=4.5V)

< 37 mΩ (V_GS= -10V)

< 62 mΩ (V_GS= -4.5V)

TO-252-4L

D-PAK

D1/D2

Top View

Drain Connected to

Tab

n-channel

p-channel

S1 G1

S2 G2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

±20

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

-12

T_C=25°C

T_C=100°C

I_D

-12

Pulsed Drain Current

I_DM

I_AR

E_AR

-40

Avalanche Current

-18

Repetitive avalanche energy L=0.1mH

T_C=25°C

P_D

Power Dissipation

T_C=100°C

T_A=25°C

T_A=70°C

12.5

2.1

12.5

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient

Symbol

Device Typ

Max

t ≤ 10s

n-ch

4.5

°C/W

R_θJA

R_θJC

R_θJA

R_θJC

Steady-State

t ≤ 10s

Steady-State

Maximum Junction-to-Case

Maximum Junction-to-Ambient

p-ch

4.5

°C/W

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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与AOD607相关器件

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AOD607_08	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
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AOD608L	AOS	获取价格	Transistor
AOD609	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
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