Datasheet > AOD606_08

AOD606_08

更新时间： 2024-09-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	245K
描述
Complementary Enhancement Mode Field Effect Transistor

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AOD606_08 数据手册

AOD606

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V

I_D= 8A (V_GS=10V)

R_DS(ON)

The AOD606 uses advanced trench

technology MOSFETs to provide

excellent R_DS(ON)and low gate charge.

The complementary MOSFETs may be

used in H-bridge, Inverters and other

applications.

p-channel

-40V

-8A (V_GS= -10V)

R_DS(ON)

< 33 mΩ (V_GS=10V)

< 47 mΩ (V_GS=4.5V)

< 50 mΩ (V_GS= -10V)

< 70 mΩ (V_GS= -4.5V)

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

TO-252-4L

D1/D2

D-PAK

Bottom View

Top View

D1/D2

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^C

Avalanche Current ^C

-40

±20

-8

V_GS

±20

T_C=25°C

6.3

T_C=100°C

I_D

-6.3

-30

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.3mH ^C

21.6

29.4

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

1.6

1.7

P_DSM

Power Dissipation ^A

T_A=70°C

1.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol Device Typ

Max

Maximum Junction-to-Ambient ^A

n-ch

°C/W

t ≤ 10s

R_θJA

R_θJC

R_θJA

R_θJC

Maximum Junction-to-Ambient ^A

7.5

Steady-State

Maximum Junction-to-Case ^B

Steady-State

Maximum Junction-to-Ambient ^A

p-ch

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Case ^B

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7...11

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