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AOD7N60 PDF预览

AOD7N60

更新时间: 2024-11-24 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 443K
描述
600V,7A N-Channel MOSFET

AOD7N60 数据手册

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AOD7N60/AOI7N60  
600V,7A N-Channel MOSFET  
General Description  
The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed  
to deliver high levels of performance and robustness in popular AC-DC applications.  
guaranteed avalanche capability these parts can be  
By providing low RDS(on), Ciss and Crss along with  
designs.  
adopted quickly into new and existing offline power supply  
Features  
VDS  
700V@150  
7A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 1.3  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
600  
V
Gate-Source Voltage  
VGS  
±30  
7
V
A
TC=25°C  
Continuous Drain  
CurrentB  
ID  
TC=100°C  
4.5  
Pulsed Drain Current C  
IDM  
24  
3.6  
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
194  
mJ  
Single pulsed avalanche energy H  
Peak diode recovery dv/dt  
TC=25°C  
388  
mJ  
V/ns  
W
W/ oC  
5
178  
PD  
Power Dissipation B  
Derate above 25oC  
1.4  
Junction and Storage Temperature Range  
TJ, TSTG  
-50 to 150  
°C  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
TL  
300  
°C  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typical  
Maximum  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
45  
-
55  
0.5  
0.7  
Maximum Case-to-sink A  
Maximum Junction-to-CaseD,F  
RθCS  
RθJC  
0.5  
1/6  
www.freescale.net.cn  

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