AOD609
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOD609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V)
R
R
DS(ON)< 30mΩ (VGS=10V)
DS(ON)< 40mΩ (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
-RoHS Compliant
-Halogen Free*
R
R
DS(ON)< 45mΩ (VGS= -10V)
DS(ON)< 66mΩ (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252-4L
D-PAK
D1/D2
Top View
Drain Connected to
Tab
D1/D2
Bottom View
Top View
G1
G2
S1
S2
G2
S2
G1
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain Current B
Avalanche Current C
40
±20
12
-40
V
VGS
±20
-12
V
TC=25°C
TC=100°C
ID
12
-12
A
IDM
IAR
EAR
30
-30
14
-20
Repetitive avalanche energy L=0.1mHC
9.8
20
mJ
W
TC=25°C
Power Dissipation
27
30
PD
TC=100°C
14
15
TA=25°C
Power Dissipation
TA=70°C
2
2
PDSM
W
1.3
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
-55 to 175
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
17.4
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
n-ch
n-ch
n-ch
25
60
5.5
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,D
Steady-State
Maximum Junction-to-Lead C
Steady-State
RθJC
RθJA
RθJC
4
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
p-ch
p-ch
p-ch
16.7
50
3.5
25
60
5
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com