Datasheet > AOD603L

AOD603L

更新时间： 2024-09-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	219K
描述
Complementary Enhancement Mode Field Effect Transistor

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AOD603L 数据手册

AOD603

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 60V

I_D= 12A (V_GS=10V)

R_DS(ON)

p-channel

-60V

-12A (VGS=-10V)

The AOD603 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used

in H-bridge, Inverters and other applications.

Standard Product AOD603 is Pb-free (meets ROHS

& Sony 259 specifications). AOD603L is a Green

Product ordering option. AOD603 and AOD603L are

electrically identical.

R_DS(ON)

< 60mΩ (V_GS=10V)

< 85mΩ (V_GS=4.5V)

< 115mΩ (V_GS=- 10V)

< 150mΩ (V_GS= -4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

n-channel

p-channel

S1 G1 D1/D2 G2 S2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-60

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

-12

T_C=100°C

I_D

-10

Pulsed Drain Current

I_DM

I_AR

E_AR

-30

Avalanche Current

-12

Repetitive avalanche energy L=0.1mH

T_C=25°C

37.5

18.8

2.5

P_D

Power Dissipation

T_C=100°C

T_A=25°C

T_A=70°C

P_DSM

Power Dissipation

1.3

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient

Symbol

Device Typ

Max

t ≤ 10s

n-ch

17.4

°C/W

R_θJA

R_θJC

R_θJA

R_θJC

Steady-State

t ≤ 10s

Steady-State

7.5

Maximum Junction-to-Case

Maximum Junction-to-Ambient

p-ch

16.7

2.5

°C/W

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7...9

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