Datasheet > AOD6N50

AOD6N50

更新时间： 2024-09-15 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	551K
描述
500V,5.3A N-Channel MOSFET

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AOD6N50 数据手册

AOD6N50

500V,5.3A N-Channel MOSFET

General Description

The AOD6N50 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

applications.By providing low R_DS(on), C_issand C_rssalong

levels of performance and robustness in popular AC-DC

with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply

designs.

Features

V_DS

600V@150℃

5.3A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1.4Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

500

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C=25°C

5.3

Continuous Drain

Current^B

I_D

T_C=100°C

3.3

Pulsed Drain Current ^C

I_DM

2.8

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

118

Single plused avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

235

V/ns

W/ ^oC

104

P_D

Power Dissipation ^B

Derate above 25^oC

0.83

-50 to 150

Junction and Storage Temperature Range

T_J, T_STG

T_L

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

1.2

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

1/6

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