Datasheet > AOD5B65M1E

AOD5B65M1E

更新时间： 2024-11-28 20:55:51

品牌	Logo	应用领域
美国万代 - AOS		栅
页数	文件大小	规格书
9页	1200K
描述
Insulated Gate Bipolar Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AOD5B65M1E 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

AOD5B65M1E 数据手册

AOD5B65M1E

650V, 5A AlphaIGBT ^TM

With Soft and Fast Recovery Anti-Parallel Diode

General Description

Product Summary

V_CE

• Very fast and soft recovery freewheeling diode

• High efficient turn-on di/dt controllability

• Low V_CE(sat)for low conduction losses

• Soft switching performance and low EMI

• High electrostatic performance

650V

I_C(T_C=100°C)

V_CE(sat)(T_J=25°C)

2.15V

• High short-circuit ruggedness

Applications

Typical ESD protection

HBM Class 2

• Low power motor drives

• Home appliances such as refrigerators and washing

....machines

• Fan motors, pumps, and vacuum cleaners

TO-252

DPAK

Top View

Bottom View

AOD5B65M1E

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOD5B65M1E

TO252

2500

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOD5B65M1E

Units

Collector-Emitter Voltage

V_CE

650

±20

Gate-Emitter Voltage

V_GE

T_C=25°C

Continuous Collector

Current

I_C

T_C=100°C

Pulsed Collector Current, Limited by T_Jmax

I_CM

I_LM

Turn-Off SOA, V_CE≤650V, Limited by T_Jmax

T_C=25°C

Continuous Diode

Forward Current

I_F

T_C=100°C

Diode Pulsed Current, Limited by T_Jmax

Short Circuit Withstanding Time ₍₁₎

V_GE=15V, V_CC≤400V, T_J≤150°C

I_FM

t_SC

µs

T_C=25°C

Power Dissipation

P_D

T_C=100°C

Junction and Storage Temperature Range

T_J, T_STG

T_L

-55 to 150

°C

Maximum Lead Temperature for Soldering

Purpose, 1/8" from case for 5 seconds

300

Thermal Characteristics

Parameter

Symbol

R_θJA

AOD5B65M1E

Units

°C/W

Maximum Junction-to-Ambient

Maximum IGBT Junction-to-Case

Maximum Diode Junction-to-Case

2.4

5.5

R_θJC

(1) Allowed number of short circuits: <1000; time between short circuits: >1s.

www.aosmd.com

Rev.1.0 October 2018

Page 1 of 9

12 3 4 5 6 7...9

中文翻译

下载PDF

与AOD5B65M1E相关器件

型号	品牌	获取价格	描述	数据表
AOD5N40	AOS	获取价格	400V,4.2A N-Channel MOSFET
AOD5N50	FREESCALE	获取价格	500V,5A N-Channel MOSFET
AOD5N50	AOS	获取价格	500V,5A N-Channel MOSFET
AOD603	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AOD603A	AOS	获取价格	60V Complementary MOSFET
AOD603A	FREESCALE	获取价格	60V Complementary MOSFET
AOD603L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AOD604	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AOD604L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AOD606	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor