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AOD5N50 PDF预览

AOD5N50

更新时间: 2024-09-13 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 289K
描述
500V,5A N-Channel MOSFET

AOD5N50 数据手册

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AOD5N50  
500V,5A N-Channel MOSFET  
General Description  
Product Summary  
The AOD5N50 is fabricated using an advanced high  
voltage MOSFET process that is designed to deliver high  
levels of performance and robustness in popular AC-DC  
applications.By providing low RDS(on), Ciss and Crss along  
with guaranteed avalanche capability this device can be  
adopted quickly into new and existing offline power supply  
designs.  
600V@150  
VDS  
ID (at VGS=10V)  
5A  
< 1.6Ω  
RDS(ON) (at VGS=10V)  
100% UIS Tested!  
100% Rg Tested!  
TO252  
DPAK  
Top View  
Bottom View  
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
500  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
CurrentB  
Pulsed Drain Current C  
Avalanche Current C  
±30  
5
V
A
TC=25°C  
ID  
TC=100°C  
3.1  
17  
IDM  
IAR  
2.8  
118  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
mJ  
Single plused avalanche energy H  
Peak diode recovery dv/dt  
TC=25°C  
235  
5
mJ  
V/ns  
W
W/ oC  
104  
PD  
Power Dissipation B  
Derate above 25oC  
0.83  
TJ, TSTG  
TL  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
-50 to 150  
°C  
300  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A,G  
Maximum Case-to-sink A  
Maximum Junction-to-CaseD,F  
Symbol  
RθJA  
Typical  
Maximum  
Units  
43  
55  
°C/W  
RθCS  
-
0.5  
1.2  
°C/W  
°C/W  
RθJC  
1
Rev0: June 2010  
Page 1 of 6  

AOD5N50 替代型号

型号 品牌 替代类型 描述 数据表
FDD5N50NZTM FAIRCHILD

功能相似

N-Channel MOSFET 500V, 4A, 1.5

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