Datasheet > AOD5N50

AOD5N50

更新时间： 2024-11-20 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	289K
描述
500V,5A N-Channel MOSFET

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数据手册
替代型号

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AOD5N50 数据手册

AOD5N50

500V,5A N-Channel MOSFET

General Description

Product Summary

The AOD5N50 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply

designs.

600V@150℃

V_DS

I_D(at V_GS=10V)

< 1.6Ω

R_DS(ON)(at V_GS=10V)

100% UIS Tested!

100% R_gTested!

TO252

DPAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

500

V_GS

Gate-Source Voltage

Continuous Drain

Current^B

Pulsed Drain Current ^C

Avalanche Current ^C

±30

T_C=25°C

I_D

T_C=100°C

3.1

I_DM

I_AR

2.8

118

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

235

V/ns

W/ ^oC

104

P_D

Power Dissipation ^B

Derate above 25^oC

0.83

T_J, T_STG

T_L

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

-50 to 150

°C

300

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,G

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

Symbol

R_θJA

Typical

Maximum

Units

°C/W

R_θCS

0.5

1.2

°C/W

R_θJC

Rev0: June 2010

Page 1 of 6

12 3 4 5 6

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AOD5N50 替代型号

型号	品牌	替代类型	描述	数据表
FDD5N50NZTM	FAIRCHILD	功能相似	N-Channel MOSFET 500V, 4A, 1.5ï

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