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AOD417

更新时间: 2024-11-20 12:24:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 445K
描述
P-Channel Enhancement Mode Field

AOD417 数据手册

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AOD417  
P-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
The AOD417 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and low  
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for  
high current load applications.  
Features  
VDS (V) = -30V  
ID = -25A  
(VGS = -10V)  
RDS(ON) < 34m(VGS = -10V)  
R
DS(ON) < 55m(VGS = -4.5V)  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-30  
V
Gate-Source Voltage  
VGS  
±20  
-25  
V
A
G
TA=25°C  
Continuous Drain  
Current B,G  
TA=100°C  
ID  
-20  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.3mH C  
IDM  
IAR  
EAR  
-60  
-14  
A
30  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
50  
PD  
W
25  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.7  
40  
Max  
25  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
Maximum Junction-to-Case D  
RθJC  
2.5  
1/6  
www.freescale.net.cn  

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