5秒后页面跳转
XP01501(XP1501) PDF预览

XP01501(XP1501)

更新时间: 2024-09-18 23:33:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 397K
描述
Composite Device - Composite Transistors

XP01501(XP1501) 数据手册

 浏览型号XP01501(XP1501)的Datasheet PDF文件第2页浏览型号XP01501(XP1501)的Datasheet PDF文件第3页 
Composite Transistors  
XP01501 (XP1501)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
+0.05  
–0.02  
0.12  
For general amplification  
0.20±0.05  
5
4
3
Features  
I
G
Two elements incorporated into one package.  
1
2
(Emitter-coupled transistors)  
(0.65) (0.65)  
G
Reduction of the mounting area and assembly cost by one half.  
1.3±0.1  
2.0±0.1  
10°  
Basic Part Number of Element  
2SD0601A(2SD601A) × 2 elements  
I
G
Absolute Maximum Ratings (Ta=25˚C)  
1 : Base (Tr1)  
2 : Emitter  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Collector (Tr1)  
EIAJ : SC–88A  
I
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
SMini5-G1 Package  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Total power dissipation  
60  
50  
7
V
Rating  
of  
element  
Marking Symbol: 5R  
Internal Connection  
V
100  
mA  
mA  
mW  
˚C  
ICP  
200  
Tr1  
1
5
4
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
2
Tstg  
–55 to +150  
˚C  
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
Conditions  
min  
60  
50  
7
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
IC = 10µA, IE = 0  
VCEO  
VEBO  
ICBO  
ICEO  
hFE  
IC = 2mA, IB = 0  
IE = 10µA, IC = 0  
VCB = 20V, IE = 0  
VCE = 10V, IB = 0  
VCE = 10V, IC = 2mA  
V
V
0.1  
100  
460  
µA  
µA  
Collector cutoff current  
Forward current transfer ratio  
160  
0.5  
Forward current transfer hFE ratio  
hFE (small/large)*1 VCE = 10V, IC = 2mA  
0.99  
0.1  
Collector to emitter saturation voltage VCE(sat)  
IC = 100mA, IB = 10mA  
0.3  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –2mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
150  
3.5  
Collector output capacitance  
*1 Ratio between 2 elements  
Cob  
Note) The Part number in the Parenthesis shows conventional part number.  
1

与XP01501(XP1501)相关器件

型号 品牌 获取价格 描述 数据表
XP01501|XP1501 PANASONIC

获取价格

Composite Device - Composite Transistors
XP01504 PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
XP01504(XP1504) ETC

获取价格

複合デバイス - 複合トランジスタ
XP01507 ETC

获取价格

TRANSISTOR | BJT | ARRAY | COMM EMITTER | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-353
XP01507(XP1507) ETC

获取价格

複合デバイス - 複合トランジスタ
XP01507|XP1507 ETC

获取价格

Composite Device - Composite Transistors
XP01531 PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
XP01554 PANASONIC

获取价格

Silicon NPN epitaxial planar type
XP01554(XP1554) ETC

获取价格

複合デバイス - 複合トランジスタ
XP01554|XP1554 ETC

获取价格

Composite Device - Composite Transistors