WTM503N018L-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Low On-Resistance
• Low Input Capacitance
• Low Miller Charge
Gate
• Low Input/Output Leakage
• Halogen and Antimony Free(HAF),
RoHS compliant
Source
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN5060 Plastic Package
Application
• Lithium-Ion Secondary Batteries
• Load Switch
• DC-DC converters and Off-line UPS
Key Parameters
Parameter
BVDSS
Value
30
Unit
V
2.1 @ VGS = 10 V
2.7 @ VGS = 4.5 V
1.5
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
130 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 20
V
Tc = 25℃
Tc = 100℃
110
69
Continuous Drain Current
ID
A
Peak Drain Current 1)
Avalanche Current
IDM
IAS
500
65.8
A
A
Single Pulse Avalanche Energy 2)
EAS
216.4
mJ
W
℃
PD
44.9
Power Dissipation
.
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
2.7
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, ID = 65.8 A, VGS = 10 V.
RθJA
45
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 13/04/2021 Rev: 01