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WTM503N018L PDF预览

WTM503N018L

更新时间: 2024-11-06 14:53:27
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
8页 577K
描述
功率金氧半电晶体

WTM503N018L 数据手册

 浏览型号WTM503N018L的Datasheet PDF文件第2页浏览型号WTM503N018L的Datasheet PDF文件第3页浏览型号WTM503N018L的Datasheet PDF文件第4页浏览型号WTM503N018L的Datasheet PDF文件第5页浏览型号WTM503N018L的Datasheet PDF文件第6页浏览型号WTM503N018L的Datasheet PDF文件第7页 
WTM503N018L-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
• Low On-Resistance  
• Low Input Capacitance  
• Low Miller Charge  
Gate  
• Low Input/Output Leakage  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Source  
1. Source 2. Source 3. Source 4. Gate  
5. Drain 6. Drain 7. Drain 8. Drain  
DFN5060 Plastic Package  
Application  
• Lithium-Ion Secondary Batteries  
• Load Switch  
• DC-DC converters and Off-line UPS  
Key Parameters  
Parameter  
BVDSS  
Value  
30  
Unit  
V
2.1 @ VGS = 10 V  
2.7 @ VGS = 4.5 V  
1.5  
RDS(ON) Max  
mΩ  
VGS(th) typ  
Qg typ  
V
130 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
Value  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
110  
69  
Continuous Drain Current  
ID  
A
Peak Drain Current 1)  
Avalanche Current  
IDM  
IAS  
500  
65.8  
A
A
Single Pulse Avalanche Energy 2)  
EAS  
216.4  
mJ  
W
PD  
44.9  
Power Dissipation  
.
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
2.7  
Unit  
Thermal Resistance from Junction to Case  
/W  
/W  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, ID = 65.8 A, VGS = 10 V.  
RθJA  
45  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 8  
Dated: 13/04/2021 Rev: 01  

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