Datasheet > WTM503P050L

WTM503P050L

更新时间： 2024-11-21 14:55:35

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	1081K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM503P050L 数据手册

WTM503P050L-HAF

P-Channel Enhancement Mode MOSFET

Features

Drain

• Low On-Resistance

• Low Miller Charge

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Applications

• Motor/Body Load Control

• Load Switch

Key Parameters

Parameter

-BV_DSS

Value

Unit

5.2 @ -V_GS= 10 V

7.1 @ -V_GS= 4.5 V

1.3

mΩ

R_DS(ON)Max

-V_GS(th)typ

Q_gtyp

124 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

T_c= 25°C

T_c= 100°C

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

-I_DM

-I_AS

E_AS

300

Single-Pulse Avalanche Energy ²⁾

T_c= 25°C

T_a= 25°C

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25℃, L = 0.1 mH, R_g= 25 Ω, I_D= 36 A, V_GS= 10 V.

³⁾Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.

1 / 8

Dated: 28/10/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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