Datasheet > WTM504N031L

WTM504N031L

更新时间： 2024-09-29 14:54:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	483K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM504N031L 数据手册

WTM504N031L-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(on)to minimize conduction losses

• Low capacitance to minimize driver losses

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

Application

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

• Synchronous buck converter

Key Parameters

Parameter

BV_DSS

Value

Unit

3.3 @ V_GS= 10 V

4.9 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

45 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current ¹⁾

I_DM

I_AS

420

Avalanche Current

Single Pulse Avalanche Energy ²⁾

E_AS

27.8

T_c= 25℃

T_c= 100℃

P_D

Power Dissipation

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.5

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 40 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 19/05/2022 Rev: 02

12 3 4 5 6 7

中文翻译

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