Datasheet > WTM504N040LS-CH

WTM504N040LS-CH

更新时间： 2024-11-25 14:55:35

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	568K
描述
功率金氧半电晶体

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WTM504N040LS-CH 数据手册

WTM504N040LS-CH

N-Channel Enhancement Mode MOSFET

Drain

Features

• AEC-Q101 Qualified

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Key Parameters

Parameter

BV_DSS

Value

Unit

4 @ V_GS= 10 V

5 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

143 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

107

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

I_DM

I_AS

500

58.8

Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

172.8

℃

P_D

51.5

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.4

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 58.8 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 04/01/2023 Rev: 01

12 3 4 5 6 7

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