WTM503P200LS-HAF
P-Channel Enhancement Mode MOSFET
Features
• Surface-mounted package
• Low Gate-Source Threshold Voltage
• Halogen and Antimony Free(HAF),
RoHS compliant
Drain
Gate
1.Source 2.Source 3.Source 4.Gate
5.Drain 6.Drain 7.Drain 8.Drain
DFN5060 Plastic Package
Source
Key Parameters
Parameter
Value
30
Unit
V
-V(BR)DSS
20 @ -VGS = 10 V
38 @ -VGS = 4.5 V
1.6
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
22 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-VDS
VGS
± 20
29
18.2
V
Tc = 25℃
Drain Current
-ID
A
Tc = 100℃
Peak Drain Current 1)
Avalanche Current
Avalanche Energy 2)
Power Dissipation
-IDM
-IAS
100
A
A
18
EAS
16
25
mJ
W
℃
PD
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
5
Unit
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 18 A, -VGS = 10 V.
℃
℃
/W
/W
RθJA
42
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 09/10/2022 Rev: 02