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WTM503P200LS PDF预览

WTM503P200LS

更新时间: 2024-11-21 14:52:59
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 560K
描述
功率金氧半电晶体

WTM503P200LS 数据手册

 浏览型号WTM503P200LS的Datasheet PDF文件第2页浏览型号WTM503P200LS的Datasheet PDF文件第3页浏览型号WTM503P200LS的Datasheet PDF文件第4页浏览型号WTM503P200LS的Datasheet PDF文件第5页浏览型号WTM503P200LS的Datasheet PDF文件第6页浏览型号WTM503P200LS的Datasheet PDF文件第7页 
WTM503P200LS-HAF  
P-Channel Enhancement Mode MOSFET  
Features  
• Surface-mounted package  
• Low Gate-Source Threshold Voltage  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Drain  
Gate  
1.Source 2.Source 3.Source 4.Gate  
5.Drain 6.Drain 7.Drain 8.Drain  
DFN5060 Plastic Package  
Source  
Key Parameters  
Parameter  
Value  
30  
Unit  
V
-V(BR)DSS  
20 @ -VGS = 10 V  
38 @ -VGS = 4.5 V  
1.6  
RDS(ON) Max  
mΩ  
-VGS(th) typ  
Qg typ  
V
22 @ -VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
Value  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
-VDS  
VGS  
± 20  
29  
18.2  
V
Tc = 25℃  
Drain Current  
-ID  
A
Tc = 100℃  
Peak Drain Current 1)  
Avalanche Current  
Avalanche Energy 2)  
Power Dissipation  
-IDM  
-IAS  
100  
A
A
18  
EAS  
16  
25  
mJ  
W
PD  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ,Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
5
Unit  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 18 A, -VGS = 10 V.  
/W  
/W  
RθJA  
42  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 09/10/2022 Rev: 02  

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