Datasheet > WTM503P300LS

WTM503P300LS

更新时间： 2024-11-06 14:54:55

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	548K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM503P300LS 数据手册

WTM503P300LS-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Logic level

• Low gate charge for fast power switching

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

Applications

• Load Switch

• Motor Drives

Key Parameters

Parameter

-BV_DSS

Value

Unit

30 @ -V_GS= 10 V

45 @ -V_GS= 4.5 V

1.8

R_DS(ON)Max

mΩ

-V_GS(th)typ

Qg typ

19.8 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single Pulse Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

E_AS

28.8

℃

P_D

20.8

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 24 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 14/09/2022 Rev: 02

12 3 4 5 6 7

中文翻译

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