Datasheet > WTM503N110L

WTM503N110L

更新时间： 2024-01-08 19:01:36

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	497K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM503N110L 数据手册

WTM503N110L-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low On-Resistance

• Low Gate Charge

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Application

• Motor/Body Load Control

• Load Switch

• DC-DC converters and Off-line UPS

Key Parameters

Parameter

BV_DSS

Value

Unit

11 @ V_GS= 10 V

14.7 @ V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

20 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

V_DS

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous drain current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

150

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

℃

P_tot

28.6

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.3

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 21 A, V_GS= 10 V.

℃

R_θJA

40.5

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 13/01/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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