Datasheet > WTM503P055LS

WTM503P055LS

更新时间： 2024-11-25 14:55:23

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	570K
描述
功率金氧半电晶体

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WTM503P055LS 数据手册

WTM503P055LS-HAF

P-Channel Enhancement Mode MOSFET

Features

Drain

• Low On-Resistance

• Low Miller Charge

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

Applications

Source

• Motor/Body Load Control

• Load Switch

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

Key Parameters

Parameter

-BV_DSS

Value

Unit

5.5 @ -V_GS= 10 V

7 @ -V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

146 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

94.6

59.6

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

350

62.3

E_AS

194

℃

P_D

54.5

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.3

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 62.3 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 17/10/2022 Rev: 02

12 3 4 5 6 7

中文翻译

下载PDF

与WTM503P055LS相关器件

型号	品牌	获取价格	描述	数据表
WTM503P075LK	SWST	获取价格	功率金氧半电晶体
WTM503P080LS	SWST	获取价格	功率金氧半电晶体
WTM503P080LS-CH	SWST	获取价格	功率金氧半电晶体
WTM503P140LS	SWST	获取价格	功率金氧半电晶体
WTM503P200LS	SWST	获取价格	功率金氧半电晶体
WTM503P260L	SWST	获取价格	功率金氧半电晶体
WTM503P300LS	SWST	获取价格	功率金氧半电晶体
WTM503P600LS	SWST	获取价格	功率金氧半电晶体
WTM503P600LS-CH	SWST	获取价格	功率金氧半电晶体
WTM504N015S	SWST	获取价格	功率金氧半电晶体