WTM503N040LS-CH
N-Channel Enhancement Mode MOSFET
Features
Drain
• Low RDS( ON )
• Low Gate Charge
• AEC-Q101 Qualified
Gate
• Halogen and Antimony Free(HAF),
RoHS compliant
1.Source 2.Source 3.Source 4.Gate
5.Drain 6.Drain 7.Drain 8.Drain
DFN5060 Plastic Package
Source
Application
•
Motor/Body Load Control
• Load Switch
• DC-DC converters and Off-line UPS
Key Parameters
Parameter
BVDSS
Value
30
Unit
V
4.1 @ VGS = 10 V
6.1 @ VGS = 4.5 V
1.6
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
53 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 20
60
38
V
Tc = 25℃
Tc = 100℃
Drain Current
ID
A
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
280
A
A
29
Single Pulse Avalanche Energy 2)
Power Dissipation
EAS
42
25
mJ
W
℃
Ptot
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
5
Unit
℃/W
℃/W
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, IAS = 29 A, VGS = 10 V.
RθJA
50
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 15/12/2022 Rev: 01