Datasheet > WTM503N038LK

WTM503N038LK

更新时间： 2024-11-06 14:54:59

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	617K
描述
功率金氧半电晶体

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数据手册

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WTM503N038LK 数据手册

WTM503N038LK-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

• ESD protection

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

• Typical ESD Protection HBM Class 2

Classification Voltage Range(V)

< 125

Key Parameters

Parameter

BV_DSS

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Value

Unit

2.9 @ V_GS= 10 V

3.8 @ V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

51 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

350

41.3

Single Pulse Avalanche Energy ²⁾

E_AS

85.2

℃

Power Dissipation

P_tot

33.3

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.7

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 41.3 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 21/04/2021 Rev: 01

12 3 4 5 6 7 8

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