Datasheet > WTM503N040L

WTM503N040L

更新时间： 2023-12-06 20:07:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	1235K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM503N040L 数据手册

WTM503N040L-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low Gate Charge

• Very Low R_DS(on)

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

Source

• DC/DC Converters

Key Parameters

Parameter

BV_DSS

Value

Unit

4 @ V_GS= 10 V

mΩ

R_DS(ON)Max

6.3 @ V_GS= 4.5 V

1.6

V_GS(th)typ

Q_gtyp

61 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 16

T_c= 25℃

Drain Current-Continuous

Peak Drain Current, Pulsed ¹⁾

Drain Current-Continuous

I_D

T_c= 100℃

I_DM

I_DSM

260

15.5

T_a= 25℃

T_a= 70℃

T_c= 25℃

Power Dissipation

Avalanche Current

Avalanche Energy ²⁾

P_D

P_DSM

I_AS

T_a= 25℃

3.1

E_AS

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L =0.1 mH, R_g= 25 Ω, I_D= 35 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 07/10/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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