Datasheet > WTM504N060LS

WTM504N060LS

更新时间： 2024-11-21 14:53:59

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	769K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM504N060LS 数据手册

WTM504N060LS-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low R_{DS( ON )}

• Low Input Capacitance

• Low Input/Output Leakage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Source

• Load Switch

• DC-DC converters and Off-line UPS

Key Parameters

Parameter

BV_DSS

Value

Unit

7.6 @ V_GS= 10 V

9.5 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

48 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

I_D

Continuous Drain Current

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

200

Single Pulse Avalanche Energy ²⁾

E_AS

℃

T_c= 25℃

Power Dissipation

P_D

42.8

T_J, T_stg

- 55 to + 175

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.5

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 175°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 26 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 26/07/2023 Rev: 06

12 3 4 5 6 7

中文翻译

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