Datasheet > WTM504N015S-CH

WTM504N015S-CH

更新时间： 2024-11-21 14:55:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	1090K
描述
功率金氧半电晶体

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WTM504N015S-CH 数据手册

WTM504N015S-CH

N-Channel Enhancement Mode MOSFET

Drain

Features

• AEC-Q101 Qualified

Gate

• Surface-mounted package

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Applications

• High power inverter system

Key Parameters

Parameter

BV_DSS

Value

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

1.5 @ V_GS= 10 V

2.8

mΩ

115 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

150

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

600

32.2

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

P_D

518

℃

T_c= 25℃

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 175

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 175°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 1 mH, R_g= 25 Ω, I_AS= 32.2 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 18/08/2023 Rev: 01

12 3 4 5 6 7

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