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WTM504N015S PDF预览

WTM504N015S

更新时间: 2024-11-25 14:53:19
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 1090K
描述
功率金氧半电晶体

WTM504N015S 数据手册

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WTM504N015S-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
• Surface-mounted package  
Gate  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Source  
1.Source 2.Source 3.Source 4.Gate  
5.Drain 6.Drain 7.Drain 8.Drain  
DFN5060 Plastic Package  
Applications  
• High power inverter system  
Key Parameters  
Parameter  
BVDSS  
Value  
40  
Unit  
V
RDS(ON) Max  
VGS(th) typ  
Qg typ  
1.5 @ VGS = 10 V  
2.8  
mΩ  
V
115 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter Symbol  
Value  
40  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
150  
95  
Drain Current  
ID  
A
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
600  
32.2  
A
A
Single-Pulse Avalanche Energy 2)  
Power Dissipation  
EAS  
PD  
518  
mJ  
W
75  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
Tj,Tstg  
- 55 to + 175  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
2
Unit  
℃/W  
℃/W  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 175°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 1 mH, Rg = 25 Ω, IAS = 32.2 A, VGS = 10 V.  
50  
RθJA  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
1 / 7  
®
Dated: 18/08/2023 Rev: 01  

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