WTM504N015S-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Surface-mounted package
Gate
• Halogen and Antimony Free(HAF),
RoHS compliant
Source
1.Source 2.Source 3.Source 4.Gate
5.Drain 6.Drain 7.Drain 8.Drain
DFN5060 Plastic Package
Applications
• High power inverter system
Key Parameters
Parameter
BVDSS
Value
40
Unit
V
RDS(ON) Max
VGS(th) typ
Qg typ
1.5 @ VGS = 10 V
2.8
mΩ
V
115 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter Symbol
Value
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 20
V
Tc = 25℃
Tc = 100℃
150
95
Drain Current
ID
A
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
600
32.2
A
A
Single-Pulse Avalanche Energy 2)
Power Dissipation
EAS
PD
518
mJ
W
℃
75
Tc = 25℃
Operating Junction and Storage Temperature Range
Tj,Tstg
- 55 to + 175
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
2
Unit
℃/W
℃/W
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 175°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 1 mH, Rg = 25 Ω, IAS = 32.2 A, VGS = 10 V.
50
RθJA
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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®
Dated: 18/08/2023 Rev: 01