Datasheet > WTM503P260L

WTM503P260L

更新时间： 2023-12-06 20:03:35

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	630K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM503P260L 数据手册

WTM503P260L-HAF

P-Channel Enhancement Mode MOSFET

Features

Drain

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

Source

Applications

• Load Switches

• Battery Switch

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

Key Parameters

Parameter

-BV_DSS

Value

Unit

26 @ -V_GS= 10 V

42 @ -V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

22 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

Drain Current

-I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

-I_DM

-I_AS

E_AS

100

28.8

T_c= 25℃

T_c= 100℃

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 24 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 09/10/2022 Rev: 02

12 3 4 5 6 7

中文翻译

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