WTM503P260L-HAF
P-Channel Enhancement Mode MOSFET
Features
Drain
• Surface-mounted package
• Low Gate-Source Threshold Voltage
• Halogen and Antimony Free(HAF),
Gate
RoHS compliant
Source
Applications
• Load Switches
• Battery Switch
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN5060 Plastic Package
Key Parameters
Parameter
-BVDSS
Value
30
Unit
V
26 @ -VGS = 10 V
42 @ -VGS = 4.5 V
1.5
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
22 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
-VDS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
25
17
V
Tc = 25℃
Drain Current
-ID
A
Tc = 100℃
Peak Drain Current, Pulsed 1)
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy 2)
-IDM
-IAS
EAS
100
24
A
A
28.8
25
10
mJ
Tc = 25℃
Tc = 100℃
Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
5
Unit
℃/W
℃/W
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 24 A, VGS = 10 V.
RθJA
50
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
®
1 / 7
Dated: 09/10/2022 Rev: 02