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WTM503P260L PDF预览

WTM503P260L

更新时间: 2024-11-06 14:53:43
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 630K
描述
功率金氧半电晶体

WTM503P260L 数据手册

 浏览型号WTM503P260L的Datasheet PDF文件第2页浏览型号WTM503P260L的Datasheet PDF文件第3页浏览型号WTM503P260L的Datasheet PDF文件第4页浏览型号WTM503P260L的Datasheet PDF文件第5页浏览型号WTM503P260L的Datasheet PDF文件第6页浏览型号WTM503P260L的Datasheet PDF文件第7页 
WTM503P260L-HAF  
P-Channel Enhancement Mode MOSFET  
Features  
Drain  
• Surface-mounted package  
• Low Gate-Source Threshold Voltage  
• Halogen and Antimony Free(HAF),  
Gate  
RoHS compliant  
Source  
Applications  
• Load Switches  
• Battery Switch  
1. Source 2. Source 3. Source 4. Gate  
5. Drain 6. Drain 7. Drain 8. Drain  
DFN5060 Plastic Package  
Key Parameters  
Parameter  
-BVDSS  
Value  
30  
Unit  
V
26 @ -VGS = 10 V  
42 @ -VGS = 4.5 V  
1.5  
RDS(ON) Max  
mΩ  
-VGS(th) typ  
Qg typ  
V
22 @ -VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
-VDS  
Value  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
25  
17  
V
Tc = 25  
Drain Current  
-ID  
A
Tc = 100℃  
Peak Drain Current, Pulsed 1)  
Single-Pulse Avalanche Current  
Single-Pulse Avalanche Energy 2)  
-IDM  
-IAS  
EAS  
100  
24  
A
A
28.8  
25  
10  
mJ  
Tc = 25℃  
Tc = 100℃  
Power Dissipation  
PD  
W
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
5
Unit  
/W  
/W  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 24 A, VGS = 10 V.  
RθJA  
50  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 09/10/2022 Rev: 02  

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