Datasheet > WTM503P075LK

WTM503P075LK

更新时间： 2024-11-10 14:55:31

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	576K
描述
功率金氧半电晶体

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数据手册

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WTM503P075LK 数据手册

WTM503P075LK-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Advanced trench cell design

• High speed switch

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 2

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Classification Voltage Range(V)

< 125

Key Parameters

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Parameter

-V_(BR)DSS

Value

Unit

7.5 @ -V_GS= 10 V

11.5 @ -V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

112 @ -V_GS= 10 V

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

-I_D

Peak Drain Current ¹⁾

Avalanche Current

Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

300

58.1

E_AS

168.8

℃

P_D

41.1

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 58.1 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 13/03/2023 Rev: 03

12 3 4 5 6 7

中文翻译

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